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  powerdi is a registered trademark of diodes incorporated DMN3024SFG document number: ds35439 rev. 3 - 2 1 of 7 www.diodes.com may 2012 ? diodes incorporated DMN3024SFG advance information 30v n-channel enhanc ement mode mosfet powerdi ? product summary v (br)dss r ds(on) max i d max t a = 25c 30v 23m ? @ v gs = 10v 7.5a 33m ? @ v gs = 4.5v 6.3 a description and applications this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. ? backlighting ? power management functions ? dc-dc converters features and benefits ? 100% unclamped inductive switch (uis) test in production ? low r ds(on) ? ensures on state losses are minimized ? small form factor thermally efficient package enables higher density end products ? occupies just 33% of the board area occupied by so-8 enabling smaller end product ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: powerdi3333-8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging DMN3024SFG-7 powerdi3333-8 2000/tape & reel DMN3024SFG-13 powerdi3333-8 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information bottom view s s s g d d d d pin 1 top view n34 = product type marking code yyww = date code marking yy = last digit of year (ex: 11 = 2011) ww = week code (01 ~ 53) n34 yyww powerdi3333-8 1 2 3 4 8 7 6 5 top view internal schematic
powerdi is a registered trademark of diodes incorporated DMN3024SFG document number: ds35439 rev. 3 - 2 2 of 7 www.diodes.com may 2012 ? diodes incorporated DMN3024SFG advance information maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 25 v continuous drain current (note 6) v gs = 10v steady state t a = 25c t a = 70c i d 7.5 6.0 a t<10s t a = 25c t a = 70c i d 10.5 8.5 a continuous drain current (note 6) v gs = 4.5v steady state t a = 25c t a = 70c i d 6.3 5.0 a t<10s t a = 25c t a = 70c i d 8.5 7.6 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm 60 a avalanche current (note 7) i as 9 a repetitive avalanche energy (note 7) e as 12 mj thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 5) t a = 25c p d 0.9 w t a = 70c 0.5 thermal resistance, junction to ambient (note 5) steady state r ja 145 c/w t<10s 74 total power dissipation (note 6) t a = 25c p d 2.2 w t a = 70c 1.4 thermal resistance, junction to ambient (note 6) steady state r ja 58 c/w t<10s 31 thermal resistance, junction to case (note 6) r jc 11 operating and storage temperature range t j, t stg -55 to +150 c notes: 5. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate. 7 .uis in production with l = 0.3mh, tj = 25c
powerdi is a registered trademark of diodes incorporated DMN3024SFG document number: ds35439 rev. 3 - 2 3 of 7 www.diodes.com may 2012 ? diodes incorporated DMN3024SFG advance information electrical characteristics t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250 a zero gate voltage drain current i dss - - 1 a v ds = 30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 25v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs ( th ) 1.0 1.3 2.4 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 15 23 m ? v gs = 10v, i d = 10a - 24 33 v gs = 4.5v, i d = 7.5a forward transfer admittance |y fs | - 11 - s v ds = 5v, i d = 10.0a diode forward voltage v sd - 0.69 1 v v gs = 0v, i s = 1a dynamic characteristics (note 9) input capacitance c iss - 479 - pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 97 - pf reverse transfer capacitance c rss - 61 - pf gate resistance r g 0.4 1.1 1.6 ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge v gs = 4.5v q g - 5.0 - nc v ds = 15v, i d = 10a total gate charge v gs = 10v q g - 10.5 - nc gate-source charge q g s - 1.8 - nc gate-drain charge q g d - 1.6 - nc turn-on delay time t d ( on ) - 2.9 - ns v gs = 10v, v ds = 15v, r g = 3 ? , r l = 1.5 ? , turn-on rise time t r - 7.9 - ns turn-off delay time t d ( off ) - 14.6 - ns turn-off fall time t f - 3.1 - ns notes: 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to product testing. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 fig. 1 typical output characteristic v , drain-source voltage (v) ds 0 10 15 20 25 30 i, d r ain c u r r en t (a) d 5 v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.5v gs v = 4.0v gs v = 10v gs 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs i, d r ain c u r r en t (a) d v = 85c gs v = 125c gs v = 25c gs v = -55c gs v = 150c gs v = 5v ds
powerdi is a registered trademark of diodes incorporated DMN3024SFG document number: ds35439 rev. 3 - 2 4 of 7 www.diodes.com may 2012 ? diodes incorporated DMN3024SFG advance information 01 02 0 15 25 30 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d 5 0.05 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0 0.04 0.01 0.02 0.03 v = 3.5v gs v = 4.5v gs v = 10v gs 0 5 10 15 20 25 30 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature 0 0.01 0.02 0.04 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) 0.03 t = 85c a t = 25c a t = -55c a t = 150c a v = 10v gs t = 125c a 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson v = 4.5v i = 5a gs d v = 10v i = 10a gs d 0 0.01 0.02 0.03 0.04 0.05 0.06 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance ( ) dson v = 4.5v i = 5a gs d v = 10v i = 10a gs d 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 1ma d i = 250a d 0.2 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd 0 2 4 6 8 10 12 14 16 18 20 i, s o u r c e c u r r e n t (a) s t = 25c a
powerdi is a registered trademark of diodes incorporated DMN3024SFG document number: ds35439 rev. 3 - 2 5 of 7 www.diodes.com may 2012 ? diodes incorporated DMN3024SFG advance information 0 5 10 15 20 25 30 fig. 9 typical total capacitance v , drain-source voltage (v) ds 10 1,000 c , c a p a c i t an c e (p f ) 100 c iss c rss c oss f = 1mhz 02 4 6 81012 fig. 10 gate-charge characteristics q , total gate charge (nc) g 0 2 4 6 8 10 v, g a t e-s o u r c e v o l t a g e (v) gs v = 15v i = 10a ds d t1, pulse duration time (sec) fig. 11 single pulse maximum power dissipation 0.001 0.01 0.1 1 10 100 1,000 0.0001 0 10 20 30 40 50 60 70 80 90 100 p , p eak t r ansien t p o iwe r (w) (pk) single pulse r = 61c/w r = r * r t - t = p * r ? ja ja(t) (t) ja ja ja(t) 0.001 0.01 0.1 1 10 100 fig. 12 transient thermal response t , pulse duration time (s) 1 0.00001 1,000 0.0001 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e r (t) = r(t) * r r = 54c/w duty cycle, d = t1/ t2 ? ja ja ja d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
powerdi is a registered trademark of diodes incorporated DMN3024SFG document number: ds35439 rev. 3 - 2 6 of 7 www.diodes.com may 2012 ? diodes incorporated DMN3024SFG advance information package outline dimensions suggested pad layout powerdi3333-8 dim min max typ d 3.25 3.35 3.30 e 3.25 3.35 3.30 d2 2.22 2.32 2.27 e2 1.56 1.66 1.61 a 0.75 0.85 0.80 a1 0 0.05 0.02 a3 ? ? 0.203 b 0.27 0.37 0.32 b2 ? ? 0.20 l 0.35 0.45 0.40 l1 ? ? 0.39 e ? ? 0.65 z ? ? 0.515 all dimensions in mm dimensions value (in mm) c 0.650 g 0.230 g1 0.420 y 3.700 y1 2.250 y2 1.850 y3 0.700 x 2.370 x2 0.420 a a1 a3 d d2 e e2 b2 (4x) l (4x) l1 (3x) b (8x) e z (4x) pin 1 id 14 85 x y y1 y3 y2 x2 c 14 85 g g1
powerdi is a registered trademark of diodes incorporated DMN3024SFG document number: ds35439 rev. 3 - 2 7 of 7 www.diodes.com may 2012 ? diodes incorporated DMN3024SFG advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expecte d to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com


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